BY25D40ESUIG(R)
4 MBIT, 3.0V (2.7V TO 3.6V), -40
part Number：
BY25D40ESUIG(R)
manufacturer：
BYTe Semiconductor
category：
Integrated Circuits (ICs) >
Memory >
Memory >
describe：
4 MBIT, 3.0V (2.7V TO 3.6V), -40
RoHS：
YES
BY25D40ESUIG(R) specifications
Part Status：
Active
Operating Temperature：
-40°C ~ 85°C (TA)
Mounting Type：
Surface Mount
Grade：
-
Qualification：
-
Memory Type：
Non-Volatile
Clock Frequency：
120 MHz
Memory Size：
4Mbit
Memory Organization：
512K x 8
Voltage - Supply：
2.7V ~ 3.6V
Memory Format：
FLASH
Technology：
FLASH - NOR
Access Time：
7 ns
Package / Case：
8-UFDFN Exposed Pad
Memory Interface：
SPI - Dual I/O
Supplier Device Package：
8-USON (2x3)
Write Cycle Time - Word, Page：
3.6ms
Products that you may be interested in
MB85RS64PNF-G-AMERE2
IC FRAM 64KBIT SPI 20MHZ 8SOP
More orders
EM016LXQBB310ISCR
IC RAM 16MBIT XSPI/QUAD 24TBGA
More orders
EM016LXQBDH10ISCR
IC RAM 16MBIT XSPI/QUAD 8DFN
More orders
EM008LXQBB310ISCR
IC RAM 8MBIT XSPI/QUAD 24TBGA
More orders
EM004LXQBDH10ISCR
IC RAM 4MBIT XSPI/QUAD 8DFN
More orders
EM004LXQBB310ISCR
IC RAM 4MBIT XSPI/QUAD 24TBGA
More orders
EM008LXQBDH10ISCR
IC RAM 8MBIT XSPI/QUAD 8DFN
More orders
BR25G160FVM-5TR
16KBIT, SPI BUS, SERIAL EEPROM :
More orders
GB231
27C128 EPROM Grab Bag DIP-28 Cle
More orders
2732A-20
IC 2732A-20 EPROM 4Kx8 DIP 24-pi
More orders
GB243
27128 EPROM Grab Bag 128K (32Kx8
More orders
GB237
27C512 EPROM Grab Bag 64Kx8 DIP-
More orders
D2716
IC 2716 EPROM 16K-Bit 450ns NMOS
More orders
Quick inquiry
Manufacturer's standard delivery time：be pending
Standard Pack Quantity：
quantity
unit price
International prices
Kind reminder => Please fill out the form below. We will contact you as soon as possible.
756448060@qq.com
756448060
13725578060
