BY25Q16ESWIG(R)
16 MBIT, 3.0V (2.7V TO 3.6V), -4
part Number：
BY25Q16ESWIG(R)
manufacturer：
BYTe Semiconductor
category：
Integrated Circuits (ICs) >
Memory >
Memory >
describe：
16 MBIT, 3.0V (2.7V TO 3.6V), -4
RoHS：
YES
BY25Q16ESWIG(R) specifications
Part Status：
Active
Operating Temperature：
-40°C ~ 85°C (TA)
Mounting Type：
Surface Mount
Grade：
-
Qualification：
-
Memory Type：
Non-Volatile
Voltage - Supply：
2.7V ~ 3.6V
Memory Format：
FLASH
Memory Size：
16Mbit
Memory Organization：
2M x 8
Package / Case：
8-WDFN Exposed Pad
Technology：
FLASH - NOR
Access Time：
7 ns
Clock Frequency：
108 MHz
Memory Interface：
SPI - Quad I/O, QPI
Supplier Device Package：
8-WSON (5x6)
Write Cycle Time - Word, Page：
50µs, 2.4ms
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