NXVF6532M3TG01
SIC POWER MOSFET MODULE 650V, 32
NXVF6532M3TG01 Specifications
Mounting Type：
Through Hole
Part Status：
Active
FET Feature：
-
Operating Temperature：
-55°C ~ 175°C (TJ)
Grade：
-
Qualification：
-
Current - Continuous Drain (Id) @ 25°C：
31A (Tc)
Configuration：
4 N-Channel (Full Bridge)
Technology：
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)：
650V
Rds On (Max) @ Id, Vgs：
44mOhm @ 15A, 18V
Vgs(th) (Max) @ Id：
4V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs：
58nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：
1215pF @ 400V
Power - Max：
65.2W (Tj)
Package / Case：
13-SSIP Exposed Pad, Formed Leads
Supplier Device Package：
APM16
